Dr. Hanwen Wang, Associate Researcher, specializes in novel semiconductor information devices.

His research focuses on micro/nano information devices based on 2D semiconductor materials. He has developed an innovative doping method for 2D semiconductors based on interface coupling effects and pioneered the fabrication of 3D complementary logic circuits using 2D semiconductors (Nature 630, 346, 2024). He proposed a new mechanism for modulating electrical anisotropy in low-symmetry 2D materials through gate voltage control, leading to the development of unique anisotropic floating-gate memory devices (Nature Communications, 10, 2302, 2019). Additionally, he designed and fabricated ferroelectric/semiconductor van der Waals heterostructures, achieving gate-programmable multi-state ferroelectric memristors (Advanced Materials, 35, 2208266, 2023).

As principal investigator, he has led several research projects including the Liaoning Provincial Natural Science Foundation for Distinguished Young Scholars, sub-projects of the National Key R&D Program, and the National Natural Science Foundation of China (Category C). He was honored with the '2024 Top Ten Scientific and Technological Emerging Talents Award in China'.