Research Highlights - 材料量子调控技术研究所

Institute of Quantum Materials and Devices

Research Highlights

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IQMD Researchers Examine the Mystery of 'Ferroelectric Memory' in Two-Dimension

2D-ferroelectricity-like effect in graphene/hexagonal boron nitride (h-BN) heterostructures has puzzled condensed-matter physicists. Some devices exhibit ferroelectric-like resistance hysteresis and a partial loss of gate control, whereas others show no a

2026-08-28
IQMD Achieves Modulation of 2D Electronic State Using DNA Origami Lattices

Recently, researchers from IQMD and collaborators succeeded in integrating DNA origami 2D lattices with 2D van der Waals (vdW) materials, forming a unique soft-hard matter interface...

2025-03-13
Researchers at IQMD wrote News&Views in Nature Synthesis

Recently, Dr. Xiaoxi Li, an Associate Professor at the Institute of Optoelectronics, Shanxi University, and a Joint Research Scientist at the IQMD, LAM, published a perspective article titled "Metallic nanosheets fill the gap" in Nature Synthesis.

2024-10-15
IQMD observed fractional quantum Hall effect in a high-mobility 2D semiconductor

Researchers at the IQMD have realized stable and reliable low-temperature Ohmic contacts for n-type molybdenum disulfide (MoS₂) field-effect transistors. Under mK temperatures and strong magnetic fields, they observed the fractional quantum Hall effects..

2024-10-30
A 2D quantum interfacial doping effect for 3D complementary logic

The construction of three-dimensional integrated circuits based on two-dimensional semiconductors offers a viable path to addressing the Moore's Law crisis. However, research progress in this field has been sluggish...

2024-05-29

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Research Highlights